| 摘要 |
<p>Ferroelectric circuit elements, such as field effect transistors or capacitors may be formed on the basis of hafnium oxide, which may also be used during the fabrication of sophisticated high-k metal gate electrode structures of fast transistors. To this end, the hafnium-based oxide having appropriate thickness and material composition may be patterned at any appropriate manufacturing stage, without unduly affecting the overall process flow for fabricating a sophisticated high-k metal gate electrode structure.Figure lh</p> |
