METHOD OF FORMING A P-TYPE ZNO THIN FILM AND METHOD OF FORMING A DEVICE USING THE ZNO THIN FILM

摘要

An embodiment of the present invention relates to a method of forming a p-type ZnO thin film and a method of forming a device using the same. Provided is the method of forming a p-type ZnO thin film using an atomic layer deposition method with ammonia as a nitrogen dopant. The method of forming a p-type ZnO thin film comprises a step of applying a zinc source to a substrate; a step of applying an oxygen source to the substrate after applying the zinc source to the substrate; and a step of applying ammonia to the substrate after applying the zinc source to the substrate. [Reference numerals] (1000) Supplying zinc source;(1100) Supplying oxygen source;(1200) Supplying ammonia water