| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride-based LED element capable of contributing to improvement in production efficiency of the nitride-based LED element suitable for flip-chip mounting.SOLUTION: A method of manufacturing a nitride-based LED element includes first to third steps. At the first step, a lamination body having first and second principal surfaces, and including an n-type nitride semiconductor layer, an active layer consisting of a nitride semiconductor, a p-type nitride semiconductor layer, and a p- electrode layer in this order from the second principal surface side toward the first principal surface side, is prepared. At the second step, a first recessed part having a depth that reaches the n-type nitride semiconductor layer is provided to the first principal surface side of the lamination body, by femtosecond laser processing. At the third step, an n- electrode contacting with a surface of the n-type nitride semiconductor layer exposed to a bottom of the first recessed part is formed. |
