发明名称 |
Semiconductor Device and Method of Forming Junction Enhanced Trench Power Mosfet |
摘要 |
A semiconductor device has a substrate and first and second gate structures formed over a first surface of the substrate. A drain region is formed in the substrate as a second surface of the substrate. An epitaxial region is formed in the substrate over the drain region. A sidewall spacer is formed over the first and second gate structures. A lateral LDD region is formed between the first and second gate structures. A trench is formed through the lateral LDD region and partially through the substrate self-aligned to the sidewall spacer. A vertical drift region is formed along a sidewall of the trench. An insulating material is deposited in the trench. A first source region is formed adjacent to the first gate structure opposite the lateral LDD region. A second source region is formed adjacent to the second gate structure opposite the lateral LDD region.
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申请公布号 |
US2013313640(A1) |
申请公布日期 |
2013.11.28 |
申请号 |
US201213479142 |
申请日期 |
2012.05.23 |
申请人 |
SHEN ZHENG JOHN;SHEA PATRICK M.;OKADA DAVID N.;GREAT WALL SEMICONDUCTOR CORPORATION |
发明人 |
SHEN ZHENG JOHN;SHEA PATRICK M.;OKADA DAVID N. |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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