| 摘要 |
PROBLEM TO BE SOLVED: To provide a lamination type thin film transistor capable of achieving high light stability (&Dgr;Vth≤1 V for light irradiation of λ=420nm), and suppressing hump effect in Vg-Id characteristic.SOLUTION: A thin film transistor 1 comprises: a first region A containing a composition represented by InGaZnO(a>0,b≥0,c>0,d>0, a+b+c=1) and satisfying b≤91a/74-17/40 as the oxide semiconductor layer; and second region A2 arranged on a side farther from the gate electrode than the first region and containing a composition represented by InGaZnO(e>0,f>0,g>0,h>0, and e+f+g=1), satisfying f/(e+f)≥0.80 and being different from that of the first region. |
