发明名称 METHOD OF MANUFACTURING A TRANSFER MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 In a mask blank for manufacturing a transfer mask, the mask blank has a light-shielding film on a transparent substrate. The light-shielding film is made of a material containing tantalum as a main metal component and includes a highly oxidized layer which has an oxygen content of 60 at % or more and which is formed as a surface layer of the light-shielding film. The highly oxidized layer is placed on a side opposite to a transparent substrate side.
申请公布号 US2013316271(A1) 申请公布日期 2013.11.28
申请号 US201313955831 申请日期 2013.07.31
申请人 HOYA CORPORATION 发明人 NOZAWA OSAMU;SHISHIDO HIROAKI;SUZUKI TOSHIYUKI
分类号 G03F1/80 主分类号 G03F1/80
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