| 摘要 |
A semiconductor manufacturing apparatus according to an embodiment includes a stage capable of mounting a semiconductor substrate thereon, a first irradiation part configured to irradiate an etching beam onto the semiconductor substrate from a first direction inclined at an arbitrary angle with respect to a vertical direction to a surface of the semiconductor substrate, and a second irradiation part configured to irradiate an etching beam onto the semiconductor substrate from a second direction inclined at an arbitrary angle with respect to the vertical direction. The first and second irradiation parts simultaneously irradiate the etching beams when processing the semiconductor substrate or a material on the semiconductor substrate.
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