发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a delamination method which does not damage a release layer, and to release with a good yield the entire layer of not only a release layer with a small area but also a release layer with a large area.SOLUTION: After fixing substrates are pasted, removal of a part of a glass substrate is triggered by scribing or laser irradiation of the glass substrate, and then delamination is started from the removed part. Thereby, the delamination is performed with a good yield. In addition, cracks are prevented by applying a resin to the entire face of a terminal electrode excluding a connection portion but including a periphery. |
申请公布号 |
JP2013239714(A) |
申请公布日期 |
2013.11.28 |
申请号 |
JP20130124324 |
申请日期 |
2013.06.13 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
GOTO YUGO;FUKUMOTO YUMIKO;TAKAYAMA TORU;MARUYAMA JUNYA;TSURUME TAKUYA |
分类号 |
H01L21/02;H01L29/786;G02F1/1368;G09F9/00;H01L21/20;H01L21/336;H01L21/762;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L51/50;H01L51/52;H01L51/56;H05B33/02;H05B33/10 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|