| 发明名称 |
TERMINATION ARRANGEMENT FOR VERTICAL MOSFET |
| 摘要 |
Representative implementations of devices and techniques provide a termination arrangement for a transistor structure. The periphery of a transistor structure may include a recessed area having features arranged to improve performance of the transistor at or near breakdown. |
| 申请公布号 |
US2013313636(A1) |
申请公布日期 |
2013.11.28 |
| 申请号 |
US201213478038 |
申请日期 |
2012.05.22 |
| 申请人 |
WOOD ANDREW;ZUNDEL MARKUS |
发明人 |
WOOD ANDREW;ZUNDEL MARKUS |
| 分类号 |
H01L27/088;H01L21/336;H01L29/78 |
主分类号 |
H01L27/088 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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