发明名称 |
A NON-UNIFORM LATERAL PROFILE OF TWO-DIMENSIONAL ELECTRON GAS CHARGE DENSITY IN TYPE III NITRIDE HEMT DEVICES USING ION IMPLANTATION THROUGH GRAY SCALE MASK |
摘要 |
A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.
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申请公布号 |
US2013313611(A1) |
申请公布日期 |
2013.11.28 |
申请号 |
US201213478402 |
申请日期 |
2012.05.23 |
申请人 |
KHALIL SAMEH;BOUTROS KARIM S.;HRL LABORATORIES, LLC |
发明人 |
KHALIL SAMEH;BOUTROS KARIM S. |
分类号 |
H01L29/778;H01L21/338 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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