Method of manufacturing semiconductor active layer and method of manufacturing thin film transistor using the same
摘要
<p>A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic% of In in the IGZO layer to be about 45 atomic% to about 80 atomic%.</p>
