| 摘要 |
A substrate processing apparatus includes an electrostatic chuck enclosing an electrostatic electrode plate and a chamber having a ground potential and housing the electrostatic chuck. When the absolute value of the potential generated at a wafer after DC discharge is generated between the wafer and the chamber is 0.5 kV, the potential of the electrostatic electrode plate is changed from 2.5 kV to 1.5 kV to generate DC discharge so that the absolute value of the potential of a placing surface of the wafer of the electrostatic chuck becomes 0.5 kV after the plasma etching process, the polarities of the potential of the placing surface after the change and the wafer become the same, and the absolute value of the potential difference between the wafer and the chamber becomes 0.5 kV or more. The wafer is then removed from the electrostatic chuck.
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