发明名称 Cost-effective method for extreme ultraviolet (EUV) mask production
摘要 The present disclosure provides for many different embodiments. An exemplary method can include providing a blank mask and a design layout to be patterned on the blank mask, the design layout including a critical area; inspecting the blank mask for defects and generating a defect distribution map associated with the blank mask; mapping the defect distribution map to the design layout; performing a mask making process; and performing a mask defect repair process based on the mapping.
申请公布号 US8592102(B2) 申请公布日期 2013.11.26
申请号 US20090650985 申请日期 2009.12.31
申请人 LIN CHIN-HSIANG;LEE HENG-JEN;HUANG I-HSIUNG;TU CHIH-CHIANG;CHEN CHUN-JEN;LAI RICK;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIN CHIN-HSIANG;LEE HENG-JEN;HUANG I-HSIUNG;TU CHIH-CHIANG;CHEN CHUN-JEN;LAI RICK
分类号 G03F1/24;G03F1/72;G03F1/84 主分类号 G03F1/24
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