发明名称 |
Cost-effective method for extreme ultraviolet (EUV) mask production |
摘要 |
The present disclosure provides for many different embodiments. An exemplary method can include providing a blank mask and a design layout to be patterned on the blank mask, the design layout including a critical area; inspecting the blank mask for defects and generating a defect distribution map associated with the blank mask; mapping the defect distribution map to the design layout; performing a mask making process; and performing a mask defect repair process based on the mapping.
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申请公布号 |
US8592102(B2) |
申请公布日期 |
2013.11.26 |
申请号 |
US20090650985 |
申请日期 |
2009.12.31 |
申请人 |
LIN CHIN-HSIANG;LEE HENG-JEN;HUANG I-HSIUNG;TU CHIH-CHIANG;CHEN CHUN-JEN;LAI RICK;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN CHIN-HSIANG;LEE HENG-JEN;HUANG I-HSIUNG;TU CHIH-CHIANG;CHEN CHUN-JEN;LAI RICK |
分类号 |
G03F1/24;G03F1/72;G03F1/84 |
主分类号 |
G03F1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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