发明名称 Fine resist pattern forming method and nanoimprint mold structure
摘要 A light-transmitting mold structure having a mold pattern corresponding to a portion to form a pattern by nanoimprint and a conductive film pattern corresponding to a portion to form a pattern by nonadiabatic near-field exposure is used to irradiate UV light from a back surface of the mold structure and to perform nonadiabatic near-field light exposure in an imprint process so that all patterns having various sizes for simulating various designs can be faithfully transferred by a single imprint process (imprint & UV exposure).
申请公布号 US2009001634(A1) 申请公布日期 2009.01.01
申请号 US20080155651 申请日期 2008.06.06
申请人 ELPIDA MEMORY, INC. 发明人 HIROSHIMA MASAHITO
分类号 B29C59/16 主分类号 B29C59/16
代理机构 代理人
主权项
地址