发明名称 |
PHOTO MASK BLANK MANUFACTURING METHOD, PHOTO MASK BLANK, PHOTO MASK, AND PATTERN TRANSFER METHOD |
摘要 |
<p>The purpose of the present invention is to provide a manufacture technology of a functional layer that has a small variation of optical density, low defect, high quality, and high etching speed. To solve the problems, a method for manufacturing a photo mask blank includes a chrome-based material including metal element at a temperature of 400 or less at which the mixture of the functional layer and a chrome element is melted when manufacturing the photo mask blank having at least one functional layer on a transparent substrate. During the process for forming the functional layer, a sputtering process (Co-Sputtering) is performed on a chrome target (target A) and a target (target B) made of at least one kind of a metal element as the main element together. Instead of using target A or target B, one kind of target or two kinds of the targets are used.</p> |
申请公布号 |
KR20130128341(A) |
申请公布日期 |
2013.11.26 |
申请号 |
KR20130054823 |
申请日期 |
2013.05.15 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
YOSHIKAWA HIROKI;FUKAYA SOUICHI;INAZUKI YUKIO;NAKAGAWA HIDEO |
分类号 |
H01L21/027;G03F1/20 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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