发明名称 Methods of manufacturing a mask blank substrate, a mask blank, a photomask, and a semiconductor device
摘要 A before-chucking main surface shape is measured in an actual measurement region of a main surface of a substrate which has been precision-polished. Based on that shape and a shape of a mask stage (1), a simulated after-chucking main surface shape of the substrate, when a photomask (2) manufactured from the substrate is set in an exposure apparatus, is obtained. A selection is made of the substrate in which the after-chucking main surface shape has a flatness of a first threshold value or less in a virtual calculation region thereof. A calculation is performed and a selection is made of the substrate in which an after-correction main surface shape has a flatness of a second threshold value or less in the correction region.
申请公布号 US8592106(B2) 申请公布日期 2013.11.26
申请号 US201213399286 申请日期 2012.02.17
申请人 TANABE MASARU;HOYA CORPORATION 发明人 TANABE MASARU
分类号 G03F1/00;G03B27/62;G03F1/50;G03F1/60;H01L21/027 主分类号 G03F1/00
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