发明名称 |
A METALLIZATION SYSTEM OF A SEMICONDUCTOR DEVICE COMPRISING EXTRA-TAPERED TRANSITION VIAS |
摘要 |
In a metallization system of a semiconductor device, a transition via may be provided with an increased degree of tapering by modifying a corresponding etch sequence. For example, the resist mask for forming the via opening may be eroded once or several times in order to increase the lateral size of the corresponding mask opening. Due to the pronounced degree of tapering, enhanced deposition conditions may be accomplished during the subsequent electrochemical deposition process for commonly filling the via opening and a wide trench connected thereto. |
申请公布号 |
KR20130127013(A) |
申请公布日期 |
2013.11.22 |
申请号 |
KR20117016628 |
申请日期 |
2009.12.29 |
申请人 |
ADVANCED MICRO DEVICES, INC.;AMD FAB 36 LIMITED LIABILITY COMPANY & CO. KG |
发明人 |
FEUSTEL FRANK;WERNER THOMAS;FROHBERG KAI |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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