| 发明名称 |
MAGNETIC RANDOM ACCESS MEMORY |
| 摘要 |
A magnetic random access memory (MRAM), and a memory module, memory system including the same, and method for controlling the same are disclosed. The MRAM includes magnetic memory cells configured to change between at least two states according to a magnetization direction, and a mode register supporting a plurality of operational modes.
|
| 申请公布号 |
US2013311717(A1) |
申请公布日期 |
2013.11.21 |
| 申请号 |
US201313768858 |
申请日期 |
2013.02.15 |
| 申请人 |
KIM CHAN-KYUNG;KANG DONG-SEOK;KIM HYE-JIN;PARK CHUL-WOO;SOHN DONG-HYUN;LEE YUN-SANG;KANG SANG-BEOM;OH HYUNG-ROK;CHA SOO-HO;GLOBIT CO., LTD.;DIGITAL MEDIA RESEARCH INSTITUTE, INC. |
发明人 |
KIM CHAN-KYUNG;KANG DONG-SEOK;KIM HYE-JIN;PARK CHUL-WOO;SOHN DONG-HYUN;LEE YUN-SANG;KANG SANG-BEOM;OH HYUNG-ROK;CHA SOO-HO |
| 分类号 |
G11C11/16;G06F12/02 |
主分类号 |
G11C11/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
