| 摘要 |
The purpose of the present invention is to provide a semiconductor device, which can be manufactured by means of a simple process, while suppressing deterioration of yield, and a semiconductor device manufacturing method. The present invention has: a TFT substrate (100A); an oxide layer (15), which includes a semiconductor region (5) and a conductor region (7), and which has at least a part of the semiconductor region overlapping a gate electrode (3a) with a first insulating layer (4) therebetween; a protection layer (8), which covers the channel region of the semiconductor region; and a transparent electrode (9), which is formed to overlap at least a part of the conductor region when viewed from the normal line direction of the substrate (2). At least a part of the end portion of the oxide layer is covered with the protection layer. |
