| 摘要 |
<p>A semiconductor device (1) has a substrate (10), a gate-insulating film (20), and a gate electrode (30). The substrate (10) comprises a compound semiconductor, and has a plurality of first recesses (17) formed therein which have first sidewall surfaces (17A) and open to one principal surface (10A). The gate-insulating film (20) is positioned so as to contact the top of the first sidewall surfaces (17A). The gate electrode (30) is positioned so as to contact the top of the gate-insulating film (20). The substrate (10) includes first-conductive-type source regions (15) positioned so as to sandwich the first recesses (17) and face one another, when seen from a cross-section in the thickness direction, and second-conductive-type body regions (14) positioned so as to sandwich the first recesses (17) and face one another, when seen from the same cross-section. Opposing source regions (15) are connected to one another in a region sandwiched by a first recess (17) and another first recess (17) adjacent to the first recess (17), when seen from a planar view. As a result, it is possible to provide a semiconductor device (1) capable of reducing cell size.</p> |
