发明名称 |
FET Amplifier with wide dynamic range |
摘要 |
A simple method for increasing the dynamic range of a GaAs FET amplifier is described. The drain resistance of the FET is adjusted to induce leakage current across the gate-source junction when excessive power levels are imposed on the gate. This current shunt is provided without added circuit components and therefore does not affect the sensitivity or bandwidth performance of the amplifier.
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申请公布号 |
US4420724(A) |
申请公布日期 |
1983.12.13 |
申请号 |
US19820378739 |
申请日期 |
1982.05.17 |
申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
OWEN, BRIAN |
分类号 |
H03F3/08;H03F3/16;H03K5/02;H03K5/08;H04B10/158;(IPC1-7):H03F3/16 |
主分类号 |
H03F3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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