发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR FABRICATING THEREOF
摘要 A TFT(Thin Film Transistor) array substrate and a manufacturing method thereof are provided to enable at least one of a gate pattern and a source drain pattern to be formed by a conductive layer and a conductive layer protection film formed to cover the conductive layer to improve the conductivity of the gate pattern and the source drain pattern, thereby improving the supply efficiency of a gate signal and a data signal and improving the switching characteristic of a TFT. A gate pattern includes a gate electrode(108) formed on a substrate(142), a gate line(102) connected with the gate electrode, and a lower gate pad electrode(128) connected to the gate line. A gate insulating film(144) is formed to cover the gate pattern. A source drain pattern includes a data line(104) crossing the gate line, a source electrode(110) connected to the data line, a drain electrode(112) facing the source electrode, and a lower data pad electrode(136) connected to the gate line. Transparent electrode patterns include a pixel electrode(118) connected to the drain electrode. At least one of the gate pattern and the source drain pattern includes a conductive layer(164) and a conductive layer protection film(162) formed to cover the conductive layer.
申请公布号 KR101331432(B1) 申请公布日期 2013.11.21
申请号 KR20060118421 申请日期 2006.11.28
申请人 发明人
分类号 G02F1/136 主分类号 G02F1/136
代理机构 代理人
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