发明名称 |
HIGH ELECTRON MOBILITY TRANSISTORS AND METHODS OF MANUFACTURING THE SAME |
摘要 |
According to example embodiments, High electron mobility transistors (HEMTs) may include a discontinuation region in a channel region. The discontinuation region may include a plurality of 2DEG unit regions that are spaced apart from one another. The discontinuation region may be formed at an interface between two semiconductor layers or adjacent to the interface. The discontinuation region may be formed by an uneven structure or a plurality of recess regions or a plurality of ion implantation regions. The plurality of 2DEG unit regions may have a nanoscale structure. The plurality of 2DEG unit regions may be formed in a dot pattern, a stripe pattern, or a staggered pattern. |
申请公布号 |
US2013307026(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
US201313752766 |
申请日期 |
2013.01.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG SUN-KYU;SHIN JAI-KWANG;CHOI HYUK-SOON;KIM JONG-SEOB;OH JAE-JOON;HA JONG-BONG;HWANG IN-JUN;KIM KYOUNG-YEON |
分类号 |
H01L29/778;H01L29/66 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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