| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical device wafer processing method capable of forming an optical device with high brightness regardless of a rear face state of an optical device wafer.SOLUTION: A method for processing an optical device wafer 11 in which an optical device is formed in each region defined by plural scheduled division lines comprises: a laser processing groove formation step of radiating pulse laser beam 69 having absorptivity to the optical device wafer 11 from a rear face of the optical device wafer 11 along the scheduled division lines, and forming a laser processing groove 23 on the rear face of the optical device wafer 11; and a split step of providing an external force to the optical device wafer 11, splitting the optical device wafer 11 along the laser processing groove 23, and forming an optical device chip. In the laser processing groove formation step, a pulse interval of the pulse laser beam 69 radiated to the optical device wafer 11 is 50 nm or less, and a repetition frequency is 10 MHz or more. |
