发明名称 |
METHOD AND STRUCTURE FOR FORMING FIN RESISTORS |
摘要 |
A fin resistor and method of fabrication are disclosed. The fin resistor comprises a plurality of fins arranged in a linear pattern with an alternating pattern of epitaxial regions. An anneal diffuses dopants from the epitaxial regions into the fins. Contacts are connected to endpoint epitaxial regions to allow the resistor to be connected to more complex integrated circuits.
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申请公布号 |
US2013307076(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
US201213472605 |
申请日期 |
2012.05.16 |
申请人 |
CHENG KANGGUO;ADAM THOMAS N.;KHAKIFIROOZ ALI;REZNICEK ALEXANDER;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;ADAM THOMAS N.;KHAKIFIROOZ ALI;REZNICEK ALEXANDER |
分类号 |
H01L27/12;H01L21/8234 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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