发明名称 METHOD AND STRUCTURE FOR FORMING FIN RESISTORS
摘要 A fin resistor and method of fabrication are disclosed. The fin resistor comprises a plurality of fins arranged in a linear pattern with an alternating pattern of epitaxial regions. An anneal diffuses dopants from the epitaxial regions into the fins. Contacts are connected to endpoint epitaxial regions to allow the resistor to be connected to more complex integrated circuits.
申请公布号 US2013307076(A1) 申请公布日期 2013.11.21
申请号 US201213472605 申请日期 2012.05.16
申请人 CHENG KANGGUO;ADAM THOMAS N.;KHAKIFIROOZ ALI;REZNICEK ALEXANDER;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHENG KANGGUO;ADAM THOMAS N.;KHAKIFIROOZ ALI;REZNICEK ALEXANDER
分类号 H01L27/12;H01L21/8234 主分类号 H01L27/12
代理机构 代理人
主权项
地址