REACTOR FOR VAPOR DEPOSITION AND METHOD FOR MANUFACTURING ORGANIC THIN FILM

摘要

The present invention relates to a reactor for vapor deposition and to a method for manufacturing an organic thin film. The reactor for vapor deposition according to one embodiment of the present invention comprises: a gas supply unit having a plurality of distributed openings for supplying organic vapor precursors; and a susceptor on which a substrate is placed. Two or more controlled temperature zones adjacent to each other are provided in a path for transferring the organic vapor precursors from the gas supply unit to the substrate. If a first controlled temperature zone in the gas supply unit side from among the two or more controlled temperature zones adjacent to each other has a temperature change rate (M1), the first controlled temperature zone has a negative temperature change rate having an absolute value smaller than the negative temperature change rate (M2) of a second controlled temperature zone in the susceptor side.