发明名称 |
METHOD TO RESOLVE HOLLOW METAL DEFECTS IN INTERCONNECTS |
摘要 |
A method of repairing hollow metal void defects in interconnects and resulting structures. After polishing interconnects, hollow metal void defects become visible. The locations of the defects are largely predictable. A repair method patterns a mask material to have openings over the interconnects (and, sometimes, the adjacent dielectric layer) where defects are likely to appear. A local metal cap is formed in the mask openings to repair the defect. A dielectric cap covers the local metal cap and any recesses formed in the adjacent dielectric layer.
|
申请公布号 |
US2013307151(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
US201213472555 |
申请日期 |
2012.05.16 |
申请人 |
BONILLA GRISELDA;BAO JUNJING;CHOI SAMUEL S.;FILIPPI RONALD G.;LUSTIG NAFTALI E.;SIMON ANDREW H.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BONILLA GRISELDA;BAO JUNJING;CHOI SAMUEL S.;FILIPPI RONALD G.;LUSTIG NAFTALI E.;SIMON ANDREW H. |
分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|