发明名称 |
ROTATIONAL ABSORPTION SPECTRA FOR SEMICONDUCTOR MANUFACTURING PROCESS MONITORING AND CONTROL |
摘要 |
<p>Methods and apparatus for semiconductor manufacturing process monitoring and control are provided herein. In some embodiments, apparatus for substrate processing may include a process chamber for processing a substrate in an inner volume of the process chamber; a radiation source disposed outside of the process chamber to provide radiation at a frequency of about 200 GHz to about 2 THz into the inner volume via a dielectric window in a wall of the vacuum process chamber; a detector to detect the signal after having passed through the inner volume; and a controller coupled to the detector and configured to determine the composition of species within the inner volume based upon the detected signal.</p> |
申请公布号 |
WO2013173034(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
WO2013US38111 |
申请日期 |
2013.04.25 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SUI, ZHIFENG;ARMACOST, MICHAEL D.;STOUT, PHILLIP;LIAN, LEI;PATZ, RYAN |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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