Method for producing a semiconductor element on a copper substrate with intermediate insulation layer

摘要

The method involves forming an insulating layer (50) on a copper substrate (10). A sintered copper layer consisting of oxygen free copper alloy powder and organic diluent is applied on copper substrate before forming the insulating layer, under a nitrogen atmosphere. A LED (40) located on insulating layer has barrier layer that reaches appropriate temperature during lighting in order to distribute the light over dome (45). An independent claim is included for a semiconductor element.