SEMICONDUCTOR POWER CONVERSION DEVICE

摘要

The semiconductor power conversion device comprises n (where n is a natural number) mutually isolated inverse conversion devices INV U1 to INV Un that output three-level voltage; and an inverse conversion device INV US , isolated from said inverse conversion devices INV U1 to INV UN , that employs as input DC voltage a voltage V DCS of one half or one third of the input DC voltage V DC of said inverse conversion devices INV U1 to INV Un and that outputs three-level voltage; and in that said inverse conversion devices INV U1 to INV Un and said inverse conversion device INV u are series-cascade connected, and output a maximum V DC ×n+V DCS .