发明名称 |
Process for growth of low dislocation density gan |
摘要 |
<p>High quality free standing GaN is obtained using a new modification of the Epitaxial Lateral Overgrowth technology in which 3D islands or features are created only by tuning the growth parameters. Smoothing these islands (2D growth) is achieved thereafter by setting growth conditions producing enhanced growth. The repetition of 3D-2D growth results in multiple bending of the threading dislocations thus producing thick layers or free standing GaN with threading discloation density below 10 6 cm -2 .</p> |
申请公布号 |
EP2664696(A2) |
申请公布日期 |
2013.11.20 |
申请号 |
EP20130180114 |
申请日期 |
2006.12.15 |
申请人 |
SAINT-GOBAIN CRISTAUX & DETECTEURS |
发明人 |
BEAUMONT, BERNARD;FAURIE, JEAN-PIERRE;GIBART, PIERRE |
分类号 |
C30B29/40;C30B25/02;H01L21/02;H01L21/20 |
主分类号 |
C30B29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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