| 摘要 |
PURPOSE: A metal oxide nanostructure and a manufacturing method thereof are provided to adjust the thickness of an amorphous insulating layer in order to control a nanostructure. CONSTITUTION: A manufacturing method of a metal oxide nanostructure comprises the following steps: providing a precursor containing a first metal and oxygen on transparent substrates(100) to form an insulator film layer(200); and providing a precursor containing a second metal and oxygen on the insulating film layer and forming a metal oxide layer(300) having a nanostructure. The transparent substrate in the first step is composed of an upper transparent substrate(102) and a lower transparent substrate(101). The upper transparent substrate is a transparent electrode. The thickness of the insulation film layer in the first step is 6-24 nanometers. The nanostructure in the second step is nanowire(310) or annuals. The first metal is magnesium. In the first step, the flow ratio of precursor containing magnesium to oxygen is 1:800-1:1,440. |
