发明名称 |
LED structure having embedded zener diode |
摘要 |
A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.
|
申请公布号 |
US8587018(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US201113167878 |
申请日期 |
2011.06.24 |
申请人 |
HSIA SHOULI STEVE;YU CHIH-KUANG;FU KEN WEN-CHIEN;KUO HUNG-YI;KAO HUNG-CHAO;WU MING-FENG;YANG FU-CHIH;TSMC SOLID STATE LIGHTING LTD. |
发明人 |
HSIA SHOULI STEVE;YU CHIH-KUANG;FU KEN WEN-CHIEN;KUO HUNG-YI;KAO HUNG-CHAO;WU MING-FENG;YANG FU-CHIH |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|