发明名称 LED structure having embedded zener diode
摘要 A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.
申请公布号 US8587018(B2) 申请公布日期 2013.11.19
申请号 US201113167878 申请日期 2011.06.24
申请人 HSIA SHOULI STEVE;YU CHIH-KUANG;FU KEN WEN-CHIEN;KUO HUNG-YI;KAO HUNG-CHAO;WU MING-FENG;YANG FU-CHIH;TSMC SOLID STATE LIGHTING LTD. 发明人 HSIA SHOULI STEVE;YU CHIH-KUANG;FU KEN WEN-CHIEN;KUO HUNG-YI;KAO HUNG-CHAO;WU MING-FENG;YANG FU-CHIH
分类号 H01L33/00 主分类号 H01L33/00
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