发明名称 |
Non-volatile memory device including diode-storage node and cross-point memory array including the non-volatile memory device |
摘要 |
Provided are a non-volatile memory device and a cross-point memory array including the same which have a diode characteristic enabling the non-volatile memory device and the cross-point memory array including the same to operate in a simple structure, without requiring a switching device separately formed so as to embody a high density non-volatile memory device. The non-volatile memory device includes a first electrode; a diode-storage node formed on the first electrode; and a second electrode formed on the diode-storage node.
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申请公布号 |
US8586978(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US20080216529 |
申请日期 |
2008.07.07 |
申请人 |
KIM KI-HWAN;PARK YOUNG-SOO;KANG BO-SOO;LEE MYOUNG-JAE;LEE CHANG-BUM;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KI-HWAN;PARK YOUNG-SOO;KANG BO-SOO;LEE MYOUNG-JAE;LEE CHANG-BUM |
分类号 |
H01L29/12;H01L21/00 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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