发明名称 Conductive feature for semiconductor substrate and method of manufacture
摘要 An embodiment of the disclosure includes a conductive feature on a semiconductor die. A substrate is provided. A bond pad is formed over the substrate. The bond pad has a first width. A polyimide layer is formed over the substrate and the bond pad. The polyimide layer has a first opening over the bond pad with a second width. A silicon-based protection layer overlies the polyimide layer. The silicon-based protection layer has a second opening over the bond pad with a third width. The first opening and the second opening form a combined opening having sidewalls to expose a portion of the bond pad. A UBM layer is formed over the sidewalls of combined opening to contact the exposed portion of the bond pad. A conductive feature overlies the UBM layer.
申请公布号 US8587119(B2) 申请公布日期 2013.11.19
申请号 US20100761641 申请日期 2010.04.16
申请人 HWANG CHIEN-LING;WU YI-WEN;LIU CHUNG-SHI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HWANG CHIEN-LING;WU YI-WEN;LIU CHUNG-SHI
分类号 H01L23/488;H01L21/60 主分类号 H01L23/488
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