发明名称 |
Conductive feature for semiconductor substrate and method of manufacture |
摘要 |
An embodiment of the disclosure includes a conductive feature on a semiconductor die. A substrate is provided. A bond pad is formed over the substrate. The bond pad has a first width. A polyimide layer is formed over the substrate and the bond pad. The polyimide layer has a first opening over the bond pad with a second width. A silicon-based protection layer overlies the polyimide layer. The silicon-based protection layer has a second opening over the bond pad with a third width. The first opening and the second opening form a combined opening having sidewalls to expose a portion of the bond pad. A UBM layer is formed over the sidewalls of combined opening to contact the exposed portion of the bond pad. A conductive feature overlies the UBM layer.
|
申请公布号 |
US8587119(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US20100761641 |
申请日期 |
2010.04.16 |
申请人 |
HWANG CHIEN-LING;WU YI-WEN;LIU CHUNG-SHI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HWANG CHIEN-LING;WU YI-WEN;LIU CHUNG-SHI |
分类号 |
H01L23/488;H01L21/60 |
主分类号 |
H01L23/488 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|