发明名称 |
Method for forming diffusion regions in a silicon substrate |
摘要 |
A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.
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申请公布号 |
US8586397(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US201113250594 |
申请日期 |
2011.09.30 |
申请人 |
WU KAHN C.;KRAFT STEVEN M.;LOSCUTOFF PAUL;MOLESA STEVEN EDWARD;SUNPOWER CORPORATION |
发明人 |
WU KAHN C.;KRAFT STEVEN M.;LOSCUTOFF PAUL;MOLESA STEVEN EDWARD |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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