发明名称 |
Integrated circuit memory devices having vertically arranged strings of memory cells therein and methods of operating same |
摘要 |
Nonvolatile memory devices include a first NAND-type string of EEPROM cells having a first plurality of string selection transistors therein electrically connected in series within the string. This first plurality of string selection transistors includes a first plurality of depletion-mode transistors and a first enhancement-mode transistor. A second NAND-type string of EEPROM cells is provided with a second plurality of string selection transistors therein that are electrically connected in series. The second plurality of string selection transistors includes a second plurality of depletion-mode transistors and a second enhancement-mode transistor. The first enhancement-mode transistor is stacked vertically relative to one of the second plurality of depletion-mode transistors and the second enhancement-mode transistor is stacked vertically relative to one of the first plurality of depletion-mode transistors. A first string selection plug is configured to electrically connect gate electrodes of the first enhancement-mode transistor and one of the second plurality of depletion-mode transistors.
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申请公布号 |
US8588001(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US201113181037 |
申请日期 |
2011.07.12 |
申请人 |
SIM JAE-SUNG;CHOI JUNG-DAL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SIM JAE-SUNG;CHOI JUNG-DAL |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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