| 摘要 |
A wafer having a die area and a scribe street is formed. The die area comprises die circuitry and a plurality of bond pads, and the scribe street comprises a test structure. Circuitry of the test structure is probed, and then a passivation layer overlying the surface of the wafer is formed, the passivation layer overlying the plurality of bond pads and overlying the test structure. Openings in the regions of the passivation layer overlying the plurality of bond pads are then formed to expose the plurality of bond pads while retaining the regions of the passivation layer overlying the test structure until singulation of the wafer. Pad metallizations are formed at the plurality of bond pads via the openings in the regions of the passivation layer and the wafer is singulated. The resulting dies may be packaged and the resulting IC packages may be implemented in electronic devices.
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