SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device in the present invention includes a semiconductor layer; a gate electrode which covers the end of the semiconductor layer; and an insulation layer which insulates the semiconductor layer and the gate electrode. The thickness of the insulation layer which insulates the area where the end of the semiconductor layer and the gate electrode are overlapped is greater than the thickness of the insulation layer which covers the central part of the semiconductor layer.