发明名称 |
III-V COMPOUND SEMICONDUCTOR DEVICE HAVING DOPANT LAYER AND METHOD OF MAKING THE SAME |
摘要 |
A semiconductor device comprises a semiconductor substrate; a channel layer of at least one III-V semiconductor compound above the semiconductor substrate; a gate electrode above a first portion of the channel layer; a source region and a drain region above a second portion of the channel layer; and a dopant layer comprising at least one dopant contacting the second portion of the channel layer.
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申请公布号 |
US2013299895(A1) |
申请公布日期 |
2013.11.14 |
申请号 |
US201213467133 |
申请日期 |
2012.05.09 |
申请人 |
OXLAND RICHARD KENNETH;VAN DAL MARK;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
OXLAND RICHARD KENNETH;VAN DAL MARK |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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