发明名称 |
OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE |
摘要 |
It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.
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申请公布号 |
US2013299827(A1) |
申请公布日期 |
2013.11.14 |
申请号 |
US201313947334 |
申请日期 |
2013.07.22 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SAKAKURA MASAYUKI;WATANABE RYOSUKE;SAKATA JUNICHIRO;AKIMOTO KENGO;MIYANAGA AKIHARU;HIROHASHI TAKUYA;KISHIDA HIDEYUKI |
分类号 |
H01L29/786;H01L29/12 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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