发明名称 Semiconductor Device and Method of Forming Guard Ring Around Conductive TSV Through Semiconductor Wafer
摘要 A semiconductor device has a plurality of conductive vias formed into a semiconductor wafer. An insulating lining is formed around the conductive vias and a conductive layer is formed over the insulating lining. A portion of the semiconductor wafer is removed so the conductive vias extend above a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and conductive vias. A first portion of the first insulating layer is removed and a second portion of the first insulating layer remains as guard rings around the conductive vias. A conductive layer is formed over the conductive vias. A second insulating layer is formed over the surface of the semiconductor wafer, guard rings, and conductive vias. A portion of the second insulating layer is removed to expose the conductive vias and a portion of the guard rings.
申请公布号 US2013299998(A1) 申请公布日期 2013.11.14
申请号 US201313939044 申请日期 2013.07.10
申请人 STATS CHIPPAC, LTD. 发明人 NA DUK JU;CHIA LAI YEE;YONG CHANG BEOM
分类号 H01L23/498;H01L21/768 主分类号 H01L23/498
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