发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING THROUGH SILICON PLUGS |
摘要 |
A method of making a semiconductor device, the method includes forming a first opening and a second opening in a substrate. The method further includes forming a conductive material in the first opening and in the second opening, the conductive material comprising a joined portion where the conductive material in the first opening and the conductive material in the second opening are electrically and thermally connected together at a first surface of the substrate. The method further includes reducing a thickness of the substrate from a second surface of the substrate, opposite the first surface, to expose the conductive material in the first opening and the conductive material in the second opening. The method further includes connecting a device to the second surface of the substrate.
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申请公布号 |
US2013302979(A1) |
申请公布日期 |
2013.11.14 |
申请号 |
US201313942112 |
申请日期 |
2013.07.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YU CHEN-HUA;CHANG HUNG-PIN;LIN YUNG-CHI;YU CHIA-LIN;HUNG JUI-PIN;HWANG CHIEN LING |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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