| 摘要 |
PROBLEM TO BE SOLVED: To provide: a nonvolatile memory element, wherein the shape shift of upper and lower electrodes is made small; a nonvolatile memory device provided with the nonvolatile memory element; and methods for manufacturing them. SOLUTION: The method for manufacturing a nonvolatile memory element includes: a step of stacking a lower electrode layer 3, a resistance change layer 2, an upper electrode layer 1, and a mask layer in sequence; a step of forming the mask layer into a specified shape; and an etching step of forming the upper electrode layer 1, the resistance change layer 2 and the lower electrode layer 3 into the specified shape by the same mask while the mask layer with the specified shape is used as a mask. In the method, the etching rate of the lower electrode layer is larger than that of the upper electrode layer 1 when etching the lower electrode layer 3. COPYRIGHT: (C)2010,JPO&INPIT |
