发明名称 |
Z2FET field-effect transistor with a vertical subthreshold slope and with no impact ionization |
摘要 |
The transistor comprises first and second source/drain electrodes formed in a semiconductor film by N-doped and P-doped areas, respectively. A polarization voltage is applied between the two source/drain electrodes in order to impose to the P-doped electrode a potential higher than that of the N-doped electrode. The transistor comprises first and second devices for generating a potential barrier in the semiconductor film. The two potential barriers are opposed to the passage of the charge carriers emitted by the first and second source/drain electrodes, respectively. The two potential barriers are shifted with respect to an axis connecting the two source/drain electrodes. The two devices for generating a potential barrier are configured to generate a potential barrier having a variable amplitude and it are electrically connected to the gate and to the counter electrode.
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申请公布号 |
US8581310(B2) |
申请公布日期 |
2013.11.12 |
申请号 |
US201213611841 |
申请日期 |
2012.09.12 |
申请人 |
WAN JING;CRISTOLOVEANU SORIN;LE ROYER CYRILLE;ZASLAVSKY ALEXANDER;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;CENTRE NATIONALE DE LA RECHERCHE SCIENTIFIQUE |
发明人 |
WAN JING;CRISTOLOVEANU SORIN;LE ROYER CYRILLE;ZASLAVSKY ALEXANDER |
分类号 |
H01L29/80 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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