发明名称 Semiconductor device
摘要 One wiring width of upper and lower wiring paths formed facing each other sandwiching an interlayer insulating film is large, and another wiring width is small; and the wiring widths of mutually adjacent wiring paths are formed to be large and small in alternating fashion on the same wiring layer.
申请公布号 US8581408(B2) 申请公布日期 2013.11.12
申请号 US20100659102 申请日期 2010.02.25
申请人 NAGASAKI KENJI;LAPIS SEMICONDUCTOR CO., LTD. 发明人 NAGASAKI KENJI
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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