A semiconductor device comprises a substrate comprising a major surface and a plurality of metal bumps on the major surface. Each of the plurality of metal bumps comprises a metal via on the major surface and a metal pillar on the metal via having an overlay offset between the metal pillar and metal via. A first metal bump of the metal bumps has a first overlay offset and a second metal bump of the metal bumps farther than the first metal bump to a centroid of the substrate has a second overlay offset greater than the first overlay offset.
