| 摘要 |
When a bump supporter is formed between contact bumps in a film type probe block and supports each contact bump, a photolithography process is excluded and the bump supporter is formed by an ashing process and a thermal treatment. Particularly, after a signal line and the contact bump are formed on a substrate with the photolithography process, the bump supporter is formed by the ashing process and the thermal treatment of the remaining photoresist in a contact bump forming process. Otherwise, when the signal line and the contact bump are formed on the substrate with the photolithography process and the remaining photoresist is removed in the contact bump forming process, the bump supporter is formed by the ashing process and a hardening process after a photoresist is newly coated. Thereby, the photolithography process for forming the bump supporter is removed. A yield is improved and manufacturing costs and processing time are reduced. |
