| 摘要 |
PROBLEM TO BE SOLVED: To provide a design method for a power semiconductor module capable of reducing noise and size while avoiding oscillation.SOLUTION: A design method includes: a step of integrating an inverse of a hole speed over a thickness of a depletion layer generated at a bipolar type power semiconductor element to calculate a hole propagation time in the bipolar type power semiconductor element; and a step of determining whether or not a resonance frequency of an equivalent circuit to a power semiconductor module is within a predetermined range including a frequency represented by an inverse of the hole propagation time. Since oscillation can be avoided by predicting presence or absence of oscillation by a short-time simulation, a noise of the power semiconductor module can be reduced. Further, because a need for providing a high-frequency loss element for avoiding the oscillation on a substrate can be eliminated, the power semiconductor module can be downsized. |
