发明名称 |
TWO-STEP SILICIDE FORMATION |
摘要 |
One embodiment of the present invention comprises a transistor having a source/drain region within a substrate, an extension region within the substrate adjoining the source/drain region and extending toward a gate on the substrate, and a dielectric spacer against the gate wherein the dielectric spacer covers at least part of the extension region. A silicide intermix layer is formed over both the source/drain region and a portion of the extension region. A silicide contact is formed through the silicide intermix layer over the source/drain region.
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申请公布号 |
US2013295765(A1) |
申请公布日期 |
2013.11.07 |
申请号 |
US201313937698 |
申请日期 |
2013.07.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ALPTEKIN EMRE;JAIN SAMEER H.;VEGA REINALDO A. |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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